Silicon Carbide Power Device Fabrication and Path to Commercialization Video

Silicon Carbide Power Device Fabrication and Path to Commercialization Video
Posted: 25 Jul 2018
Authors:
Victor Veliadis
Primary Committee:
PELS
Time: 01:17:11

The presentation will discuss major SiC power device application areas and touch on foundry models, cost reduction strategies, and path to commercialization. The advantages of SiC over other power electronic materials will be outlined, and SiC devices developed for power electronic applications will be introduced. Emphasis will be placed on SiC MOSFETs, which are currently being inserted in the majority of SiC based power electronic systems. Aspects of device fabrication will be summarized, stressing processes that do not carry over from the mature Si manufacturing world and are thus specific to SiC. Finally, the presentation will highlight common SiC Edge Termination techniques, which allow power devices to reach their full high voltage potential.

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Non-members: $15.00
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