Remaining Challenges for Designs with High Power Wide Bandgap Power Devices - A Circuit Perspective-Video

03 Sep 2019
Jin Wang
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Abstract: The talk will focus on high power applications of Gallium Nitride (GaN) and Silicon Carbide (SiC) devices. It will start with a brief introduction of examples of state-of-the-art high power GaN and SiC converters. Then, common challenges that are faced by both GaN and SiC devices including gate drive designs, high dv/dt caused reflective waves, electromagnetic interference, partial discharge, etc. will be discussed. Specific challenges for the implementations of SiC in medium and high voltage applications will also be discussed.

Bio: Jin Wang received his Ph.D. from Michigan State University, East Lansing, in 2005. From Sept 2005 to Aug 2007, he worked at the Ford Motor Company as a Core Power Electronics Engineer. He joined the Ohio State University in 2007 as an Assistant Professor and was promoted to Associate Professor in 2013 and Full Professor in 2017. His research interests include wide bandgap power devices and their applications, high-voltage and high-power converter/inverters, integration of renewable energy sources, and electrification of transportation. Dr. Wang has over 180 peer-reviewed journal and conference publications and 8 patents.

Dr. Wang received the IEEE Power Electronics Society Richard M. Bass Young Engineer Award and the National Science Foundations CAREER Award in 2011. At The Ohio State University, Dr. Wang received the Ralph L. Boyer Award for Excellence in Undergraduate Teaching Innovation in 2012, the Lumley Research Award in 2013 and the Harrison Faculty Award for Excellence in Engineering Education in 2017. Dr. Wang served as the General Chair and the Steering Committee Chair for the IEEE Future Energy Challenge in 2016 and 2017, respectively. Dr. Wang had been an Associate Editor for the IEEE Transactions on Industry Applications from 2008 to 2014. Currently, Dr. Wang serves an Associate Editor for the IEEE Transactions on Power Electronics and the IEEE Journal of Emerging and Selected Topics in Power Electronics (J-ESTPE).
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