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  • PELS
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    IEEE Members: $8.00
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    Pages/Slides: 27
19 Sep 2024

Abstract:Modern-day GPUs have tens of billions of transistors. Better processor performance comes at the price of exponentially rising power demands, so high performance processors for applications like artificial intelligence (AI) and machine learning (ML) demand continuously more power. Meanwhile, core voltages are declining with advanced processing nodes contributing to the growth of the peak currents of up to 2,000A. High-frequency and ultralow RDSON power MOSFETs play a critical role in the high-efficiency ultracompact Power Delivery Network (PDN) to power up the AI chips. This talk will discuss various types of the power MOSFETs in terms of RDSON, gate charge, capacitance, and other performance parameters and their advantages and disadvantages in modern PDN converter designs, including vertical trench MOSFETs. LDMOS transistors, and GaN FETs.

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